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| 型号 | SPB35N10 |
| 厂商 | Infineon Technologies |
| 描述 | MOSFET N-CH 100V 35A D2PAK |
| SPB35N10 PDF |  |
| 代理商 | SPB35N10 |
| 产品变化通告 | Product Discontinuation 22/Feb/2008 |
| 产品目录绘图 | Mosfets D-PAK, D2-PAK, TO-252 |
| 标准包装 | 1,000 |
| 系列 | SIPMOS® |
| FET 型 | MOSFET N 通道，金属氧化物 |
| FET 特点 | 标准 |
| 漏极至源极电压(Vdss) | 100V |
| 电流 - 连续漏极(Id) @ 25° C | 35A |
| 开态Rds（最大）@ Id, Vgs @ 25° C | 44 毫欧 @ 26.4A，10V |
| Id 时的 Vgs(th)（最大） | 4V @ 83µA |
| 闸电荷(Qg) @ Vgs | 65nC @ 10V |
| 输入电容 (Ciss) @ Vds | 1570pF @ 25V |
| 功率 - 最大 | 150W |
| 安装类型 | 表面贴装 |
| 封装/外壳 | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装 | P-TO263-3 |
| 包装 | 带卷 (TR) |
| 其它名称 | SPB35N10INTR |
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